Thin film transistor and organic el display device

ABSTRACT

A thin film transistor includes: a substrate; an undercoat layer disposed on the substrate; an oxide semiconductor layer formed above the undercoat layer and including at least indium; a gate insulating layer located opposite the undercoat layer with the oxide semiconductor layer being between the gate insulating layer and the undercoat layer; a gate electrode located opposite the oxide semiconductor layer with the gate insulating layer being between the gate electrode and the oxide semiconductor layer; and a source electrode and a drain electrode electrically connected to the oxide semiconductor layer, wherein fluorine is included in a region which is an internal region in the oxide semiconductor layer and is close to the undercoat layer.

TECHNICAL FIELD

The present invention relates to a thin film transistor (TFT) and anorganic EL display device, and in particular to an oxide semiconductorthin film transistor having an oxide semiconductor layer in an activelayer, and an organic EL display device including the oxidesemiconductor thin film transistor.

BACKGROUND ART

Active matrix display devices such as liquid crystal display devices andorganic electroluminescent (EL) display devices use TFTs as switchingelements or driver elements.

In recent years, active development has been conducted on, asnext-generation TFTs, oxide semiconductor TFTs which use an oxidesemiconductor such as InGaZnO_(x) (IGZO) for channel layers. Forexample, Patent Literature (PTL) 1 discloses an oxide semiconductor TFThaving an oxide semiconductor layer as a channel layer.

CITATION LIST Patent Literature

-   [PTL 1]

Japanese Unexamined Patent Application Publication No. 2010-161227

-   [PTL 2]

Japanese Unexamined Patent Application Publication No. 2004-140381

-   [PTL 3]

Japanese Unexamined Patent Application Publication No. 2010-80947

Non Patent Literature

-   [NPL 1]

Hideyuki Omura, Hideya Kumomi, Kenji Nomura, Toshio Kamiya, MasahiroHirano and Hideo Hosono, “First-principles study of native point defectsin crystalline indium gallium zinc oxide”, J. Appl. Phys. 105, pp.093712-093719, 2009

-   [NPL 2]

Haruka Yamazaki, Mami Fujii, Yoshihiro Ueoka, Yasuaki Ishikawa, MasakiFujiwara, Eiji Takahashi, and Yukiharu Uraoka, “High Reliable a-IGZOTFTs with SiNx Gate Insulator deposited bu SiF4/N2”, AM-FPD P-22(2012)

SUMMARY OF INVENTION Technical Problem

The electrical characteristics of oxide semiconductor TFTs aresusceptible to oxygen or hydrogen (see NPL 1, for example). For thisreason, it has been difficult to obtain oxide semiconductor TFTs havinghigh reliability.

The present invention has been conceived to solve such a problem, and anobject of the present invention is to provide a thin film transistorhaving high reliability, and an organic EL display device.

Solution to Problem

In order to achieve the above object, a thin film transistor accordingto an aspect of the present invention includes: a substrate; aninorganic layer disposed on the substrate; an oxide semiconductor layerformed above the inorganic layer and including at least indium; aninsulating layer located opposite the inorganic layer with the oxidesemiconductor layer being between the insulating layer and the inorganiclayer; a gate electrode located opposite the oxide semiconductor layerwith the insulating layer being between the gate electrode and the oxidesemiconductor layer; a source electrode and a drain electrodeelectrically connected to the oxide semiconductor layer, whereinfluorine is included in a region which is an internal region in theoxide semiconductor layer and is close to the inorganic layer.

Advantageous Effects of Invention

The present invention allows a thin film transistor and an organic ELdisplay device to be less susceptible to oxygen or hydrogen, therebyachieving the thin film transistor having high reliability and highrobustness, and the organic EL display device. In particular, it ispossible to achieve a thin film transistor and an organic EL displaydevice which are less susceptible to hydrogen from an inorganic layersuch as an undercoat layer and a separation layer.

BRIEF DESCRIPTION OF DRAWINGS

FIG. 1 is a cross-sectional view illustrating a structure of a thin filmtransistor according to an embodiment.

FIG. 2A is a cross-sectional view illustrating a process for preparing asubstrate in a method for manufacturing the thin film transistoraccording to the embodiment.

FIG. 2B is a cross-sectional view illustrating a process for forming anundercoat layer in the method for manufacturing the thin film transistoraccording to the embodiment.

FIG. 2C is a cross-sectional view illustrating a process for depositinga first oxide semiconductor film in the method for manufacturing thethin film transistor according to the embodiment.

FIG. 2D is a cross-sectional view illustrating a process for depositinga second oxide semiconductor film in the method for manufacturing thethin film transistor according to the embodiment.

FIG. 2E is a cross-sectional view illustrating a process for forming agate insulating layer in the method for manufacturing the thin filmtransistor according to the embodiment.

FIG. 2F is a cross-sectional view illustrating a process for forming agate electrode in the method for manufacturing the thin film transistoraccording to the embodiment.

FIG. 2G is a cross-sectional view illustrating a low resistance processfor an oxide semiconductor stacked film in the method for manufacturingthe thin film transistor according to the embodiment.

FIG. 2H is a cross-sectional view illustrating a process for forming aninterlayer gate insulating layer in the method for manufacturing thethin film transistor according to the embodiment.

FIG. 2I is a cross-sectional view illustrating a process for forming asource electrode and a drain electrode in the method for manufacturingthe thin film transistor according to the embodiment.

FIG. 3 is a graph illustrating the results of measuring a sheetresistance value in a case where fluorine is included in an oxidesemiconductor layer, and a sheet resistance value in a case wherefluorine is not included in the oxide semiconductor layer.

FIG. 4 is a cross-sectional view illustrating a device structure of asample used in an experiment for hydrogen resistance.

FIG. 5 is a graph illustrating, for the sample having the structureillustrated by FIG. 4, μ-PCD peak intensity and a resistance value ofthe oxide semiconductor layer when a film thickness of the silicon oxidelayer is varied.

FIG. 6 is a graph illustrating the results of comparing μ-PCD peakintensity and the presence or absence of fluorine introduction to anoxide semiconductor layer.

FIG. 7A is a graph illustrating an In3d5 XPS spectrum in a case wherefluorine is included in an oxide semiconductor layer, and an In3d5 XPSspectrum in a case where fluorine is not included in the oxidesemiconductor layer.

FIG. 7B is a graph illustrating a Zn2p3 XPS spectrum in a case wherefluorine is included in an oxide semiconductor layer, and a Zn2p3 XPSspectrum in a case where fluorine is not included in the oxidesemiconductor layer.

FIG. 7C is a graph illustrating a Ga2p3 XPS spectrum in a case wherefluorine is included in an oxide semiconductor layer, and a Ga2p3 XPSspectrum in a case where fluorine is not included in the oxidesemiconductor layer.

FIG. 8 is a graph illustrating a Zn thermal desorption spectrum by TDSin a case where fluorine is included in an oxide semiconductor layer,and a Zn thermal desorption spectrum by TDS in a case where fluorine isnot included in the oxide semiconductor layer.

FIG. 9 is a cutaway perspective view illustrating part of an organic ELdisplay device according to the embodiment.

FIG. 10 is an electric circuit diagram illustrating a pixel circuit ofthe organic EL display device illustrated by FIG. 9.

FIG. 11 is a cross-sectional view illustrating a structure of a thinfilm transistor according to a variation of the embodiment.

FIG. 12A is a cross-sectional view illustrating a process for forming aseparation layer in a method for manufacturing a thin film transistoraccording to the variation of the embodiment.

FIG. 12B is a cross-sectional view illustrating a structure of a thinfilm transistor before a glass substrate is separated, in the method formanufacturing the thin film transistor according to the variation of theembodiment.

FIG. 12C is a cross-sectional view illustrating a process for separatingthe glass substrate in the method for manufacturing the thin filmtransistor according to the variation of the embodiment.

DESCRIPTION OF EMBODIMENT

A thin film transistor according to an aspect of the present inventionincludes: a substrate; an inorganic layer disposed on the substrate; anoxide semiconductor layer formed above the inorganic layer and includingat least indium; an insulating layer located opposite the inorganiclayer with the oxide semiconductor layer being between the insulatinglayer and the inorganic layer; a gate electrode located opposite theoxide semiconductor layer with the insulating layer being between thegate electrode and the oxide semiconductor layer; a source electrode anda drain electrode electrically connected to the oxide semiconductorlayer, wherein fluorine is included in a region which is an internalregion in the oxide semiconductor layer and is close to the inorganiclayer.

According to the aspect of the present invention, fluorine is includedin the region that is the internal region in the oxide semiconductorlayer and is close to the gate insulating layer. The region close to theinorganic layer is, for example, a region located approximately 30 nmfrom the inorganic layer in a thickness direction.

Fluorine has higher binding energy with metal than oxygen. Accordingly,including fluorine in the oxide semiconductor layer enables fluorine toeliminate dangling bonds or an unstable site caused by oxygen deficiencyin the oxide semiconductor layer. In other words, including fluorine inthe oxide semiconductor layer makes it possible to compensate the oxygendeficiency in the oxide semiconductor layer.

Moreover, including fluorine in the oxide semiconductor layer preventshydrogen entering the oxide semiconductor layer from bonding with theoxide semiconductor layer. With this, it is possible to prevent hydrogenfrom entering the oxide semiconductor layer from the inorganic layersuch as an undercoat layer and a separation layer, thereby suppressinggeneration of charge carriers resulting from bonding of oxygen andhydrogen in the oxide semiconductor layer. In short, including fluorinein the oxide semiconductor layer makes it possible to improve hydrogenresistance of the oxide semiconductor layer.

Furthermore, including fluorine in the oxide semiconductor layer resultsin metallic elements included in the oxide semiconductor layer beingchemically bonded with fluorine, which makes it possible to stabilize astructure of the oxide semiconductor layer.

As just described, according to the aspect of the present invention, itis possible to make the oxide semiconductor layer less susceptible tohydrogen damage resulting from the inorganic layer such as the undercoatlayer and the separation layer as well as stabilize the structure of theoxide semiconductor layer. With this, it is possible to achieve a thinfilm transistor having high reliability and high robustness.

Moreover, in the thin film transistor according to the aspect of thepresent invention, the inorganic layer may be an undercoat layerincluding silicon oxide or silicon oxynitride and be formed on a topsurface of the substrate.

According to the aspect of the present invention, the region includingfluorine in the oxide semiconductor layer can block hydrogen fromentering the oxide semiconductor layer from the undercoat layerincluding silicon oxide or silicon oxynitride.

Moreover, in the thin film transistor according to the aspect of thepresent invention, the inorganic layer may be formed by stackinginsulating films.

According to the aspect of the present invention, even when an undercoatlayer of stacked films is used, the region including fluorine in theoxide semiconductor layer can block hydrogen from the undercoat layer.

Moreover, in the thin film transistor according to the aspect of thepresent invention, the inorganic layer may be a layer includingamorphous silicon as a main component and be formed on an under surfaceof the substrate.

According to the aspect of the present invention, the region includingfluorine in the oxide semiconductor layer can block hydrogen which isgenerated from amorphous silicon and enters the oxide semiconductorlayer through the substrate.

Moreover, in the thin film transistor according to the aspect of thepresent invention, a fluorine concentration of the region close to theinorganic layer in the oxide semiconductor layer may be higher than afluorine concentration of a region close to the insulating layer in theoxide semiconductor layer.

According to the aspect of the present invention, hydrogen damage can beeffectively reduced on a back channel side, and a high on-state currentcan be maintained on a front channel side.

Moreover, in the thin film transistor according to the aspect of thepresent invention, a region including fluorine which is the region inwhich fluorine is included in the oxide semiconductor layer may have afluorine concentration gradient in a thickness direction.

According to the aspect of the present invention, it is possible toeffectively exert the aforementioned effects of including fluorine.

Moreover, in the thin film transistor according to the aspect of thepresent invention, the region including fluorine in the oxidesemiconductor layer may have a film thickness of at least 15 nm.

According to the aspect of the present invention, even when hydrogendiffuses from the outside of the oxide semiconductor layer by annealingor the like, the region including fluorine can effectively blockhydrogen from entering the oxide semiconductor layer.

Moreover, in the thin film transistor according to the aspect of thepresent invention, the region including fluorine in the oxidesemiconductor layer may have a film thickness of at least 20 nm.

According to the aspect of the present invention, it is possible toeasily perform process control of the oxide semiconductor layer.

Moreover, in the thin film transistor according to the aspect of thepresent invention, a fluorine concentration of the oxide semiconductorlayer may be higher than a hydrogen concentration of the oxidesemiconductor layer.

According to the aspect of the present invention, it is possible to moreeffectively exert the aforementioned effects of including fluorine.

Moreover, in the thin film transistor according to the aspect of thepresent invention, metallic elements included in the oxide semiconductorlayer may further include at least one or both of gallium and zinc.

According to the aspect of the present invention, target compatibilitywith large mass production facilities is increased, and thus productioncosts can be reduced.

Moreover, an organic EL display device according to an aspect of thepresent invention includes any of the aforementioned thin filmtransistors, the organic EL display device including: pixels arranged ina matrix; and organic elements each formed corresponding to a differentone of the pixels, wherein the thin film transistor is a drivingtransistor which drives the organic EL elements.

According to the aspect of the present invention, the thin filmtransistor having high reliability and high robustness is used as thedriving transistor which drives the organic EL elements, and thus it ispossible to achieve the organic EL display device superior displayperformance.

Embodiment

The following describes an embodiment of the present invention withreference to the accompanying drawings. The embodiment described belowis merely a preferred illustration of the present invention. Values,shapes, materials, components, arrangement and connection of thecomponents, processes (steps), order of the processes, and the likeshown in the following embodiment are merely illustrative and are notintended to limit the present invention. Therefore, among the componentsof the embodiment below, components not recited in any one ofindependent claims are described as arbitrary components.

The figures are schematic illustration and do not necessarily limit thepresent invention to that precisely shown. In the figures, the samereference sign is used to refer to substantially the same component, anddescription already set forth is may be omitted or simplified.

[Structure of Thin Film Transistor]

First, the following describes a thin film transistor 1 according to theembodiment of the present invention with reference to FIG. 1. FIG. 1 isa cross-sectional view illustrating a structure of a thin filmtransistor according to the embodiment of the present invention.

As illustrated by FIG. 1, the thin film transistor 1 according to theembodiment is a top gate oxide semiconductor TFT having an oxidesemiconductor layer as a channel layer.

The thin film transistor 1 includes: a substrate 10; an undercoat layer20; an oxide semiconductor layer 30 to be a channel layer; an oxidesemiconductor layer 40S to be a source region; an oxide semiconductorlayer 40D to be a drain region; a gate insulating layer 50; a gateelectrode 60; an interlayer insulating layer 70; and a source electrode80S and a drain electrode 80D.

The following describes in detail each component of the thin filmtransistor 1 according to the embodiment.

The substrate 10 is a glass substrate made of a glass material such asquartz glass, alkali-free glass, and high heat-resistant glass. It is tobe noted that the substrate 10 is not limited to the glass substrate andmay be a resin substrate or the like. Moreover, the substrate 10 is nota rigid substrate but may be a flexible substrate including a singlelayer of a film material such as polymide, polyethylene terephthalate,and polyethylene naphthalate, or stacked layers of these.

The undercoat layer 20 is an example of an inorganic layer disposed onthe substrate 10. The undercoat layer 20 is formed on a top surface ofthe substrate 10. In the embodiment, the undercoat layer 20 is formed ona surface of the substrate 10 (side on which an oxide semiconductorlayer is formed). The undercoat layer 20 is formed to prevent impuritiessuch as sodium and phosphorus included in the substrate 10 (glasssubstrate) or moisture permeated from the air from entering the oxidesemiconductor layers 30, 40S, and 40D.

The undercoat layer 20 is a single layer insulating layer of an oxideinsulating layer or a nitride insulating layer, or a stacked insulatinglayer including an oxide insulating layer and a nitride insulatinglayer. In one instance, a single layer film of silicon nitride(SiN_(x)), silicon oxide (SiO_(y)), silicon oxynitride (SiO_(y)N_(x)),or aluminum oxide (AlO_(x)), or stacked films of these can be used asthe undercoat layer 20. In the embodiment, the undercoat layer 20 is astacked film formed by stacking insulating films. It is to be noted thata film thickness of the undercoat layer 20 is preferably set to be from100 to 500 nm.

The oxide semiconductor layer 30 is used as a channel layer. In otherwords, the oxide semiconductor layer 30 is a semiconductor layerincluding a channel region opposing the gate electrode 60 with the gateinsulating layer 50 between the channel region and the gate electrode60. By contrast, the oxide semiconductor layer 40S is a semiconductorlayer to be a source region provided on one side of the oxidesemiconductor layer 30. Moreover, the oxide semiconductor layer 40D is asemiconductor layer to be a drain region provided on the other side ofthe oxide semiconductor layer 30. The oxide semiconductor layers 40S and40D each are a low resistance region (offset region) having a resistancevalue lower than that of the oxide semiconductor layer 30.

Moreover, in each of the oxide semiconductor layers 40S and 40D, aresistance value of an upper region (region on a side of the interlayerinsulating layer 70) is less than that of a lower region (region on aside of the undercoat layer 20). Stated differently, in each of theoxide semiconductor layers 40S and 40D, the resistance values differfrom each other in a stack direction, and the resistance value of theupper layer portion is less than that of the lower layer portion.

The oxide semiconductor layers 30, 40S, and 40D are formed in apredetermined shape, on the undercoat layer 20. Moreover, the oxidesemiconductor layers 30, 40S, and 40D are made of the same material. Atransparent amorphous oxide semiconductor (TAOS) is used for thematerial of the oxide semiconductor layers 30, 40S, and 40D, forexample. Metallic elements included in each of the oxide semiconductorlayers 30, 40S, and 40D preferably include at least indium (In) andfurther at least one or both of gallium (Ga) and zinc (Zn).

The oxide semiconductor layers 30, 40S, and 40D in the embodiment eachinclude InGaZnO_(x) (IGZO) that is an oxide including indium (In),gallium (Ga), and zinc (Zn).

Moreover, the oxide semiconductor layer 30 includes fluorine (F).Specifically, fluorine is included in a region that is an internalregion in the oxide semiconductor layer 30 and is close to the undercoatlayer 20. In other words, fluorine is included in a back channel side ofthe oxide semiconductor layer 30. Specifically, fluorine is included inregions that are internal regions in the oxide semiconductor layers 40Sand 40D and are close to the undercoat layer 20. In the embodiment,fluorine that is chemically bonded is included in the oxidesemiconductor layers 30, 40S, and 40D. It is to be noted that theregions which are the internal regions in the oxide semiconductor layers30, 40S, and 40D and are close to the undercoat layer 20 each are aregion which is on the side of the undercoat layer 20 and is below atleast the middle of a thickness of the oxide semiconductor layers 30,40S, and 40D.

The oxide semiconductor layer 30 in the embodiment includes a firstregion (region including fluorine) 31 which is a region includingfluorine, and a second region (region including no fluorine) 31 which isa region including no fluorine.

The first region 31 is a first channel layer and a region on the side ofthe undercoat layer 20 (back channel side) in the oxide semiconductorlayer 30. That is to say, in the embodiment, fluorine is included onlyin the region on the side of the undercoat layer 20 in the oxidesemiconductor layer 30. By contrast, the second region 32 is a secondchannel layer and a region on a side of the gate insulating layer 50(front channel side) in the oxide semiconductor layer 30. For example,when the middle of the film thickness of the oxide semiconductor layer30 is a reference point, the first region 31 is a region (lower layer)below the middle of the film thickness of the oxide semiconductor layer30, and the second region 32 is a region (upper layer) above the middleof the film thickness of the oxide semiconductor layer 30.

Similarly, the oxide semiconductor layers 40S and 40D each include aregion on the side of undercoat layer 20 (lower layer) which is a regionin which fluorine is included (region including fluorine), and a regionon the side of the gate insulating layer 50 (upper layer) which is aregion in which no fluorine is included (region including no fluorine).

It is to be noted that the oxide semiconductor layers 40S and 40D eachare the region of which resistance is reduced, but since the lowerlayer, the region including fluorine, includes chemically bondedfluorine, it is considered that the resistance of the lower layer is notreduced much compared to the upper layer, the region including nofluorine.

As just described, a fluorine concentration of the region close to theundercoat layer 20 in each of the oxide semiconductor layers 30, 40S,and 40D is higher than that of the region close to the gate insulatinglayer 50 in each of the oxide semiconductor layers 30, 40S, 40D.

Moreover, in the embodiment, the region including fluorine (first region31 etc.) in each of the oxide semiconductor layers 30, 40S, and 40 has afluorine concentration gradient in a thickness direction. Specifically,in the region including fluorine (first region 31 etc.), a fluorineconcentration of the region on the side of the undercoat layer 20 is setto be higher than that of the region on the side opposite the undercoatlayer 20 (the side of the gate insulating layer 50). Furthermore, in theembodiment, the fluorine concentration of the region including fluorine(first region 31 etc.) gradually increases toward the undercoat layer 20from the gate insulating layer 50.

It is to be noted that, in the embodiment, although fluorine is includedin part of the region in each of the oxide semiconductor layers 30, 40S,and 40D, fluorine may be included in the whole region of each of theoxide semiconductor layers 30, 40S, and 40D. In short, the upper layer(second region 32 etc.) may not be necessary in each of the oxidesemiconductor layers 30, 40S, and 40D.

The lower layer (first region 31 etc.) in each of the oxidesemiconductor layers 30, 40S, and 40D has a film thickness of at least 5nm. The film thickness is preferably at least 15 nm and more preferablyat least 20 nm. Moreover, the oxide semiconductor layers 30, 40S, and40D each preferably have a total film thickness of 20 nm or more. It isto be noted that, in the embodiment, the film thickness of the lowerlayer in each of the oxide semiconductor layers 30, 40S, and 40D is setto be the same.

Setting the film thickness of the lower layer (first region 31 etc.) ineach of the oxide semiconductor layers 30, 40S, and 40D to be at least 5nm makes it possible to sufficiently exert the aforementioned effects ofincluding fluorine.

Moreover, even when hydrogen diffuses from the outside of the oxidesemiconductor layers 30, 40S, and 40D by annealing or the like, settingthe film thickness of the lower layer (first region 31 etc.) to be atleast 15 nm enables the lower layer including fluorine (first region 31etc.) in each of the oxide semiconductor layers 30, 40S, 40D to blockdiffusing hydrogen. In the embodiment, since the lower layer includingfluorine (first region 31 etc.) is close to the undercoat layer 20,hydrogen entering the oxide semiconductor layers 30, 40S, and 40D fromthe undercoat layer 20 can be blocked by the region close to theundercoat layer 20 (first region 31 etc.) in each of the oxidesemiconductor layers 30, 40S, and 40D. With this, it is possible toobtain stable thin film transistor characteristics.

Moreover, setting the film thickness of the lower layer (first region 31etc.) in each of the oxide semiconductor layers 30, 40S, and 40D to beat least 20 nm makes it possible to sufficiently perform process controlof the oxide semiconductor layers 30, 40S, and 40D. Stated differently,setting the film thickness of the lower layer (first region 31 etc.) ineach of the oxide semiconductor layers 30, 40S, and 40D to be at least20 nm makes it possible to set the film thickness of the oxidesemiconductor layers 30, 40S, and 40D to be at least 20 nm. With this,it is possible to readily perform deposition of the oxide semiconductorlayers 30, 40S, and 40D by sputtering or the like, and patterning of theoxide semiconductor layers 30, 40S, and 40D by a photolithography oretching method.

Furthermore, a fluorine concentration of each of the oxide semiconductorlayers 30, 40S, and 40D is higher than at least a hydrogen concentrationof a corresponding one of the oxide semiconductor layers 30, 40S, and40D. In the embodiment, the fluorine concentration of each of the oxidesemiconductor layers 30, 40S, and 40D is set to be 1×10²² atm/cm³ ormore.

The gate insulating layer 50 (insulating layer) is formed at a positionopposite the undercoat layer 20 with the oxide semiconductor layer 30being between the gate insulating layer 50 and the undercoat layer 20.Specifically, the gate insulating layer 50 is formed on the oxidesemiconductor layer 30. More specifically, the gate insulating layer 50is formed in contact with the second region 32 of the oxidesemiconductor layer 30. The gate insulating layer 50 is formed only onthe oxide semiconductor layer 30 in the embodiment, but the presentinvention is not limited to this.

The gate insulating layer 50 is a single layer insulating layer of anoxide insulating layer or a nitride insulating layer, or a stackedinsulating layer including an oxide insulating layer and a nitrideinsulating layer. The gate insulating layer 50 is a single layer film ofsilicon oxide, silicon nitride, silicon oxynitride, tantalum oxide, oraluminum oxide, or stacked films of these. In the embodiment, the gateinsulating layer 50 is a stacked film including a silicon oxide film anda silicon nitride film, for example. The film thickness of theinsulating layer 50 can be designed by taking into considerationpressure resistance of the TFT or the like, and is preferably set to befrom 50 to 500 nm, for example.

The gate electrode 60 is formed at a position opposite the oxidesemiconductor layer 30 with the gate insulating layer 50 being betweenthe gate electrode 60 and the oxide semiconductor layer 30.Specifically, the gate electrode 60 is pattern-formed in a predeterminedshape, on the gate insulating layer 50. In the embodiment, a channeldirection length (gate length) of the gate electrode 60 is the same as achannel direction length of the gate insulating layer 50.

The gate electrode 60 is an electrode having a single layer structure ora multi-layer structure including a conductive material such as metal oran alloy thereof, and may include molybdenum (Mo), aluminum (Al), copper(Cu), tungsten (W), titanium (Ti), chrome (Cr), or molybdenum tungsten(MoW), for example. The film thickness of the gate electrode 60 ispreferably set to be from 50 to 300 nm.

The interlayer insulating layer 70 is formed to cover the gate electrode60 and the oxide semiconductor layers 40S and 40D. The interlayerinsulating layer 70 may be made of a material having an organicsubstance as a main component or may be made of an inorganic substancesuch as silicon oxide, silicon nitride, silicon oxynitride, and aluminumoxide. In addition, the interlayer insulating layer 70 may be a singlelayer film or a film having stacked layers.

Moreover, in the interlayer insulating layer 70, openings (contactholes) are formed to penetrate part of the interlayer insulating layer70. The oxide semiconductor layer 40S is connected to the sourceelectrode 80S, and the oxide semiconductor layer 40D is connected to thedrain electrode 80D, via the openings of the interlayer insulating layer70.

The source electrode 80S and the drain electrode 80D are formed in apredetermined shape, on the interlayer insulating layer 70. Moreover,the source electrode 80S and the drain electrode 80D are eachelectrically connected to the oxide semiconductor layer 30. In theembodiment, the source electrode 80S and the drain electrode 80D areeach electrically and physically connected to a different one of theoxide semiconductor layers 40S and 40D via the openings formed in theinterlayer insulating layer 70, and are electrically connected to theoxide semiconductor layer 30 via the oxide semiconductor layers 40S and40D.

The source electrode 80S and the drain electrode 80D each are anelectrode having a single layer structure including an conductivematerial or an alloy thereof, or a multi-layer structure of these. Thesource electrode 80S and the drain electrode 80D may include, forexample, molybdenum (Mo), aluminum (Al), copper (Cu), tungsten (W),titanium (Ti), chrome (Cr), molybdenum tungsten alloy (MoW), or coppermanganese allow (CuMN). The film thickness of each of the sourceelectrode 80S and the drain electrode 80D is preferably set to be from50 to 300 nm, for example.

[Method for Manufacturing Thin Film Transistor]

Next, the method for manufacturing the thin film transistor 1 accordingto the embodiment will be described with reference to FIGS. 2A to 2I.FIGS. 2A to 2I are cross-sectional views illustrating processes in themethod for manufacturing the thin film transistor according to theembodiment of the present invention.

First, as illustrated by FIG. 2A, the substrate 10 is prepared. A glasssubstrate is used as the substrate 10, for example.

Next, as illustrated by FIG. 2B, the undercoat layer 20 is formed on thesubstrate 10. For example, the undercoat layer 20 including a siliconnitride film, a silicon oxide film, a silicon oxynitride film, an oxidealuminum film, or the like is formed on the substrate 10 by plasmachemical vapor deposition (CVD) or the like.

Next, as illustrated by FIG. 2C, a first oxide semiconductor filmincluding fluorine is deposited on the undercoat layer 20. The firstoxide semiconductor film SC1 may include an InGaZnO_(x) transparentamorphous oxide semiconductor. In this case, the first oxidesemiconductor film (InGaZnO_(x) film) SC1 including InGaZnO_(x) can bedeposited by a vapor phase deposition method such as a sputtering methodand a laser evaporation method.

Specifically, a target material including In, Ga, and Zn (for example, apolycrystalline sintered body having an InGaO₃(ZnO)₄ composition) isused, an argon (Ar) gas as an inert gas and a gas including oxygen (O₂)as a reactive gas are introduced into a vacuum chamber, and voltage of apredetermined power density is applied to the target material.

Here, the first oxide semiconductor film including fluorine(In—Ga—Zn—O:F) SC1 can be deposited by sputtering while introducingfluorine. The introduction (supply) of fluorine into the oxidesemiconductor layer can be performed by including fluorine in a targetor introducing a process gas including fluorine (NF₃ gas, for example).

Specifically, the first oxide semiconductor film SC1 including fluorinecan result from depositing the InGaZnO_(x) film by sputtering using atarget material including fluorine. In addition, the first oxidesemiconductor film SC1 including fluorine can result from depositing theInGaZnO_(x) film while introducing the gas including fluorine (NF₃ gas,for example). It is to be noted that it is possible to allow the firstoxide semiconductor film SC1 to have a fluorine concentration gradientin a thickness direction of the first oxide semiconductor film SC1 bychanging an introduction amount of fluorine while the first oxidesemiconductor film SC1 is being deposited. For example, it is possibleto deposit the first oxide semiconductor film SC1 whose fluorineconcentration gradually decreases upward, by gradually reducing anintroduction amount of fluorine.

Examples of a method for depositing the first oxide semiconductor filmSC1 including fluorine include a method including: applying fluorine tothe surface of the undercoat layer 20; depositing an oxide semiconductorlayer on the undercoat layer 20; and thermally diffusing fluorine intothe oxide semiconductor layer by annealing. It is to be noted that theannealing in this case may be heat treatment (annealing) for stabilizingthe oxide semiconductor layer 30, which is to be described later. Inshort, the annealing for thermal diffusion of fluorine may besimultaneously performed with other annealing.

Another example of the method for depositing the first oxidesemiconductor film SC1 including fluorine is a method includingdepositing an oxide semiconductor layer on the undercoat layer 20 andperforming NF₃ processing (fluorine processing) on the oxidesemiconductor layer. In this case, for example, as the NF₃ processing,NF₃ plasma processing may be performed at 100 W for 60 seconds.

Next, as illustrated by FIG. 2D, a second oxide semiconductor film SC2including no fluorine is deposited on the first oxide semiconductor filmSC1. Like the first oxide semiconductor film SC1, the second oxidesemiconductor film SC2 may include an InGaZnO_(x) transparent amorphousoxide semiconductor. Thus, the second oxide semiconductor film(InGaZnO_(x) film) SC2 including InGaZnO_(x) can be deposited by a vaporphase deposition method such as a sputtering method and a laserevaporation method.

Specifically, after the first oxide semiconductor film SC1 is deposited,the second oxide semiconductor film (In—Ga—Zn—O) including no fluorineis deposited by sputtering or the like without introducing (supplying)fluorine.

In the embodiment, the first oxide semiconductor film SC1 and the secondoxide semiconductor film SC2 are continuously deposited in the samechamber.

An oxide semiconductor stacked film (oxide semiconductor layer) having alaminated structure of the first oxide semiconductor film SC1 and thesecond oxide semiconductor film SC2 is formed in a predetermined shapeby patterning the oxide semiconductor staked film using aphotolithography or wet etching method.

Specifically, a resist having a predetermined shape is formed on thesecond oxide semiconductor film SC2, and part of the oxide semiconductorstacked film in a region where the resist is not formed is removed bywet etching, thereby forming the oxide semiconductor stacked film havingan island shape. It is to be noted that when the first oxidesemiconductor film SC1 and the second oxide semiconductor film SC2include InGaZnO_(x), a chemical solution obtained by mixing, forexample, phosphoric acid (H₃PO₄), nitric acid (HNO₃), acetic acid(CH₃COOH), and water may be used as an etching solution.

Next, as illustrated by FIG. 2E, the gate insulating layer 50 is formedon the oxide semiconductor stacked film having the laminated structureof the first oxide semiconductor film SC2 and the second oxidesemiconductor film SC2. For example, the gate insulating layer 50 havinga predetermined shape is formed on a predetermined region of the secondoxide semiconductor film SC2. The gate insulating layer 50 is a siliconnitride film, a silicon oxide film, a silicon oxynitride film, atantalum oxide film, an oxide aluminum film, or stacked layers of these,for example. In the embodiment, a silicon oxide film is deposited as thegate insulating layer 50 by plasma CVD.

Next, as illustrated by FIG. 2F, the gate electrode 60 is formed on thegate electrode 50. In the embodiment, after a metal film (gate metalfilm) including molybdenum tungsten (MoW) is deposited on the wholesurface of the gate insulating layer 50 by sputtering, the gateelectrode 60 is formed in a predetermined shape by patterning the metalfilm using a photolithography or wet etching method. For the wet etchingof MoW, a chemical solution can be used which is obtained by mixing, forexample, phosphoric acid (HPO₄), nitric acid (HNO₃), acetic acid(CH₃COOH), and water in a predetermined combination ratio.

Next, as illustrated by FIG. 2G, by performing a process for selectivelyreducing a resistance value of a predetermined region in the oxidesemiconductor stacked film (low resistance processing), which is thestacked film including the first oxide semiconductor film SC1 and thesecond oxide semiconductor film SC2, the oxide semiconductor stackedfilm is functionally separated into the oxide semiconductor layer 30 tobe the channel layer, the oxide semiconductor layer 40S to be the sourceregion, and the oxide semiconductor layer 40D to be the drain region.

In the embodiment, the oxide semiconductor stacked film part of whichthe gate electrode 60 is formed on is irradiated with plasma. That is tosay, the oxide semiconductor stacked film is irradiated with plasmausing the gate electrode 60 as a mask. With this, a portion of the oxidesemiconductor stacked film exposed by the gate electrode 60 isirradiated with plasma, and a portion of the oxide semiconductor stackedfilm not exposed by the gate electrode 60 is not irradiated with plasma.As a result, the low resistance process is selectively performed on onlythe portion of the oxide semiconductor stacked film irradiated withplasma (portion exposed by the gate electrode 60).

Specifically, a portion of the oxide semiconductor staked film coveredby the gate electrode 60 and not irradiated with plasma (centralportion) does not undergo the low resistance process and becomes theoxide semiconductor layer 30. The oxide semiconductor layer 30 thusformed is the channel layer and includes the first oxide semiconductorfilm SC1 including fluorine (first region 31) and the second oxidesemiconductor film SC2 including no fluorine (second region 32).

In addition, portions of the oxide semiconductor staked film not coveredby the gate electrode 60 and irradiated with plasma (side portions)undergo the low resistance process and become the oxide semiconductorlayers 40S and 40D. The oxide semiconductor layers 40S and 40D thusformed are low resistance regions (source region and drain region)including an oxide semiconductor, and each include the first oxidesemiconductor film SC1 including fluorine and the second oxidesemiconductor film SC2 including no fluorine.

It is to be noted that examples of the plasma irradiation include Arplasma irradiation and hydrogen plasma irradiation, and it is possibleto sufficiently reduce the resistance value of the oxide semiconductorstacked film using such plasma irradiation.

Next, as illustrated by FIG. 2H, the interlayer insulating layer 70 isformed to cover the oxide semiconductor layers 40S and 40D and the gateelectrode 60. The interlayer insulating layer 70 may include an organicsubstance as a main component or an inorganic substance such as asilicon oxide film. For example, a silicon oxide film may be depositedas the interlayer insulating layer 70 by plasma CVD

Then, the openings (contact holes) are formed in the interlayerinsulating layer 70 to expose part of each of the oxide semiconductorlayers 40S and 40D. Specifically, part of the interlayer insulatinglayer 70 is etched away by a photolithography or etching method, therebyforming the openings above connection portions with the source electrode80S and the drain electrode 80D in the respective oxide semiconductorlayers 40S and 40D. For example, when the oxide semiconductor layers 40Sand 40D each are a silicon oxide film, the openings can be formed in thesilicon oxide film by a dry etching method such as a reactive ionetching (RIE) method. In this case, carbon tetrafluoride (CF₄) andoxygen gas (O₂), for example, can be used as an etching gas.

Next, as illustrated by FIG. 2I, the source electrode 80S and the drainelectrode 80D are formed which are connected to the oxide semiconductorlayers 40S and 40D via the openings formed in the interlayer insulatinglayer 70. In the embodiment, after a metal film (source drain metalfilm) is deposited on the interlayer insulating layer 70 by sputteringto fill the openings formed in the interlayer insulating layer 70, themetal film is patterned by a photolithography or wet etching method toform the source electrode 80S and the drain electrode 80D having apredetermined shape.

It is to be noted that, though not illustrated, for example, a heattreatment at 300° C. (annealing) is performed subsequently. This heattreatment makes it possible to reduce oxygen deficiency in the oxidesemiconductor layer 30 to stabilize characteristics of the oxidesemiconductor layer 30.

[Operational Effect of Thin Film Transistor]

The following describes an operational effect of the thin filmtransistor 1 according to the embodiment together with the background tothe present invention.

An undercoat layer may be formed on a surface of a substrate such as aglass substrate when an oxide semiconductor layer is formed, so as toprevent impurities such as metal from diffusing from the substrate. Asilicon nitride layer including hydrogen may be used as the undercoatlayer.

Moreover, after the oxide semiconductor layer and additionally a displayelement or the like are formed on a flexible substrate (resin substrate)with the flexible substrate attached onto the glass substrate with anadhesive or the like, a flexible device may be produced by separatingthe glass substrate using a laser. In this case, as disclosed by PTL 2,there are many examples where an amorphous silicon layer is formed as aseparation layer (detachment layer) which absorbs laser light, on theglass substrate, and the glass substrate is separated using hydrogenbubbling from the amorphous silicon layer.

However, the oxide semiconductor layer is extremely sensitive tohydrogen, and thus the oxide semiconductor layer is susceptible tohydrogen from an inorganic layer such as the undercoat layer and theseparation layer. For this reason, an oxide semiconductor TFT includingthe oxide semiconductor layer has a problem in which electricalcharacteristics of the oxide semiconductor TFT are severely reduced byhydrogen damage of such an inorganic layer.

As disclosed by PTL 3 and NPL 2, it has been previously reported thatstability and reliability can be increased by improving an interfacebetween an insulating layer and an oxide semiconductor layer.

For example, NPL 2 has reported that fluorine is compensated in adangling bond site of In included in an oxide semiconductor layer (IGZO)by improving an interface with the oxide semiconductor layer using agate insulating layer in which fluorine is included, thereby leading toincrease the reliability.

In addition, NPL 2 has reported that the oxide semiconductor layer(IGZO) is measured by secondary ion mass spectrometry (SIMS) to observeno fluorine included in a bulk of IGZO.

After the inventors also actually verified whether fluorine was diffusedin an oxide semiconductor layer (IGZO) by heat or the like using aninsulating layer in which fluorine is included, they were not able toconfirm desorption of fluorine by a thermal desorption method until thetemperature reaches 500° C. or higher. This indicates that fluorine hasa stable structure in the oxide semiconductor layer, and as shown by NPL2, it is considered that the gate insulating layer in which fluorine isincluded merely produces an improvement effect in the interface betweenthe insulating layer and the oxide semiconductor layer.

However, variation in the characteristics or degradation of thereliability of an oxide semiconductor TFT is caused not only by aninterface between an insulating layer and an oxide semiconductor layerbut also by process damage resulting from hydrogen or the like in amanufacturing process. For example, the aforementioned process damageresulting from hydrogen or the like from the inorganic layer such as theundercoat layer and the separation layer causes the variation in thecharacteristics or the degradation of the reliability. Therefore, it isnot sufficient to merely improve the interface between the insulatinglayer and the oxide semiconductor layer.

The present invention has been conceived based on such knowledge, andthe inventors have arrived at an idea of obtaining a thin filmtransistor having high reliability by including fluorine in the oxidesemiconductor layers 30, 40S, and 40D as described above. In particular,the inventors have found that including fluorine in the oxidesemiconductor layers 30, 40S, and 40D makes it possible to achieve athin film transistor less susceptible to hydrogen from the inorganiclayer such as the undercoat layer and the separation layer.

The inventors have conducted various experiments to verify whether athin film transistor having high reliability is obtained by includingfluorine in an oxide semiconductor layer. The following describes theexperiments and analyses of the same. It is to be noted that in thefollowing experiments an InGaZnO_(x) film whose main components ofmetallic elements are In, Ga, and Zn is used as the oxide semiconductorlayer.

First, a point that oxygen deficiency can be compensated by includingfluorine in the oxide semiconductor layer will be described withreference to FIG. 3. FIG. 3 illustrates the results of measuring, usingfour-terminal sensing, a sheet value in vacuum heating (300° C.) for acase where fluorine is included in an oxide semiconductor layer and acase where fluorine is not included in the oxide semiconductor layer.

Charge carriers are generated by oxygen deficiency (desorption ofoxygen) to decrease a resistance value of the oxide semiconductor layer.As illustrated by FIG. 3, a sheet resistance value in the case wherefluorine is not included in the oxide semiconductor layer (IGZOincluding no F) is low such as approximately 1×10⁵Ω/□.

By contrast, a sheet resistance value in the case where fluorine isincluded in the oxide semiconductor layer (IGZO including F) is ameasurement limit (>1×10¹⁰Ω/□) and is higher than the sheet resistancevalue in the case fluorine is not included in the oxide semiconductorlayer.

This is because, since fluorine has higher binding energy with metalthan oxygen, including fluorine in the oxide semiconductor layer enablesfluorine to eliminate dangling bonds or an unstable site caused by theoxygen deficiency in the oxide semiconductor layer.

It is clear from these results that including fluorine in the oxidesemiconductor layer results in a structure in which charge carriers areless likely to be generated, that is, a structure which compensates theoxygen deficiency to be insensitive to the oxygen deficiency.

Next, a point that hydrogen resistance can be improved by includingfluorine in the oxide semiconductor layer will be described withreference to FIGS. 4 to 6.

FIG. 4 is a cross-sectional view illustrating a device structure of asample used in this experiment. As illustrated by FIG. 4, in theexperiment, a sample is used which has a three layer structure in whichan oxide semiconductor layer (IGZO), a silicon oxide layer (SiO), and asilicon nitride layer (SiN:H) including hydrogen are stacked above aglass substrate.

FIG. 5 is a graph illustrating, for the sample having the structureillustrated by FIG. 4, μ-PCD peak intensity and a resistance value ofthe oxide semiconductor layer when the film thickness of the siliconoxide layer is varied. It is to be noted that the film thickness of thesilicon oxide layer is varied to 10 nm, 120 nm, and 240 nm. Moreover,the resistance value of the oxide semiconductor layer is measured by anon-contact resistance measurement device.

As illustrated by FIG. 5, it is clear that there is a positivecorrelation between the resistance value of the oxide semiconductorlayer (IGZO) and the μ-PCD peak intensity. In other words, it is clearthat the resistance value of the oxide semiconductor layer (IGZO) andthe μ-PCD peak intensity give an indication of determininghydrogen-induced damage due to the presence or absence of fluorineintroduction.

FIG. 6 is a graph illustrating the results of comparing μ-PCD peakintensity and the presence or absence of fluorine introduction into anoxide semiconductor layer.

As illustrated by FIG. 6, it is clear that if fluorine is not includedin the oxide semiconductor layer, a μ-PCD intensity value (a ratio of apeak intensity value before depositing SiN:H film to a peak intensityvalue after depositing SiN:H film) in the oxide semiconductor layerdecreases. In other words, it is clear that a resistance value barelyvaries even if fluorine is introduced when the resistance value is low,that is, the resistance value does not decrease.

In general, if hydrogen is included in an oxide semiconductor layer, theincluded hydrogen bonds with oxygen in the oxide semiconductor layer togenerate charge carriers.

In view of, even if hydrogen is included in the oxide semiconductorlayer, including fluorine in the oxide semiconductor layer and bondingfluorine with the oxide semiconductor layer prevent the includedhydrogen from bonding with the oxide semiconductor layer. It is presumedthat since fluorine has one valence arm, there is no valence armavailable even if hydrogen enters and hydrogen is inert. As justdescribed, including fluorine in the oxide semiconductor layer canprevent the generation of the charge carriers in the oxide semiconductorlayer. In short, including fluorine in the oxide semiconductor layermakes it possible to improve the hydrogen resistance.

Next, a point that a structure of the oxide semiconductor layer isstabilized by including fluorine in the oxide semiconductor layer willbe described with reference to FIGS. 7A to 7C and FIG. 8.

FIGS. 7A to 7C each illustrate a corresponding one of In3d5, Zn1p3, andGa2p3 XPS spectra in a case where fluorine is included in an oxidesemiconductor layer (IGZO) (IGZO including F) and a corresponding one ofIn3d5, Zn1p3, and Ga2p3 XPS spectra in a case where fluorine is notincluded in an oxide semiconductor layer (IGZO) (IGZO including no F).

As illustrated by FIG. 7A, the inclusion of fluorine causes a peakposition of the In3d5 XPS spectrum to shift to a high binding energyside by at least 0.5 eV. In other words, a peak position of In3d5 inIGZO including F measured by XPS is shifted to the high binding energyside by at least 0.5 eV in comparison to a peak position of In3d5 inIGZO including no F.

Moreover, as illustrated by FIG. 7B, the inclusion of fluorine causes apeak position of the Zn2p3 XPS spectrum to shift to a high bindingenergy side by at least 0.4 eV. In other words, a peak position of Zn2p3in IGZO including F measured by XPS is shifted to the high bindingenergy side by at least 0.4 eV in comparison to a peak position of Zn2p3in IGZO including no F.

Furthermore, as illustrated by FIG. 7C, the inclusion of fluorine causesa peak position of the Ga2p3 XPS spectrum to shift to a high bindingenergy side by at least 0.5 eV. In other words, a peak position of Ga2p3in IGZO including F measured by XPS is shifted to the high bindingenergy side by at least 0.5 eV in comparison to a peak position of Ga2p3in IGZO including no F.

It is clear from the results shown in FIGS. 7A to 7C that includingfluorine in the oxide semiconductor layer results in not merely beingphysically in the oxide semiconductor layer but in being chemicallybonded with elements included in the oxide semiconductor layer.Consequently, the metallic elements included in the oxide semiconductorlayer are less likely to escape.

As just described, including fluorine in the oxide semiconductor layerresults in the metallic elements included in the oxide semiconductorlayer being chemically bonded with fluorine, which makes it possible tostabilize the structure of the oxide semiconductor layer. With this, itis possible to obtain a thin film transistor having high reliability.

FIG. 8 illustrates a Zn thermal desorption spectrum by thermaldesorption spectrometry (TDS) in a case where fluorine is included inthe oxide semiconductor layer (IGZO) (IGZO including F) and a Zn thermaldesorption spectrum by TDS in a case where fluorine is not includedtherein (IGZO including no F). It is to be noted that in FIG. 8 theoxide semiconductor layer in the case where fluorine is included thereinhas a fluorine concentration of 1×10²² atm/cm³ or more. Moreover, inFIG. 8, the horizontal axis indicates a temperature (° C.) at which Znundergoes thermal desorption, and the vertical axis indicates an amountof Zn undergoing thermal desorption (arbitrary unit).

As illustrated by FIG. 8, it is clear that the thermal desorption of Znin the oxide semiconductor layer (IGZO including F) in the case wherefluorine is included therein occurs at a temperature higher by at least50° C. in comparison to the thermal desorption of Zn in the oxidesemiconductor layer (IGZO including no F) in the case where fluorine isnot included therein. In other words, it is clear that includingfluorine in the oxide semiconductor layer 50 so that the fluorineconcentration is at least 1×10²² atm/cm³ causes the temperature (thermaldesorption temperature) at which Zn undergoes the thermal desorption toincrease by 50° C.

This is because oxygen desorbs from Zn—O bonds to destabilize Zn, whichcauses the desorption of Zn. A thermal desorption temperature can beused as a physical property index of an oxide semiconductor layer, andan increase in the thermal desorption temperature indicates that astructure of the oxide semiconductor layer is stabilized.

As just described, also from the standpoint of the thermal desorptiontemperature of Zn, including fluorine in the oxide semiconductor layerresults in the metallic elements included in the oxide semiconductorlayer being chemically bonded with fluorine, which makes it possible tostabilize the structure of the oxide semiconductor layer.

Fluorine is included in the oxide semiconductor layers 30, 40S, and 40Din the thin film transistor 1 according to the embodiment. In theembodiment, especially, fluorine is included in the regions that are theinternal regions in the oxide semiconductor layers 30, 40S, and 40D andare close to the undercoat layer 20.

With this, as mentioned above, not only the oxygen deficiency in each ofthe oxide semiconductor layers 30, 40S, and 40D can be compensated, butalso the hydrogen resistance of the oxide semiconductor layers 30, 40S,and 40D can be improved, and further the structure of each of the oxidesemiconductor layers 30, 40S, and 40D can be stabilized. Therefore, itis possible to achieve the thin-film transistor 1 having highreliability and high robustness.

As just described, a fluorine concentration of the region close to theundercoat layer 20 in each of the oxide semiconductor layers 30, 40S,and 40D is higher than that of the region close to the gate insulatinglayer 50 in each of the oxide semiconductor layers 30, 40S, and 40D.

With this, in the oxide semiconductor layers 30, 40S, and 40D, theregions (back channel regions) on the side of the substrate 10 (side ofthe undercoat layer 20) susceptible to the hydrogen damage have the highfluorine concentration, and thus the hydrogen damage on the oxidesemiconductor layers 30, 40S, and 40D can be effectively reduced byfluorine. To put it differently, it is possible to improve the hydrogenresistance to hydrogen entering from the undercoat layer 20.

By contrast, in the oxide semiconductor layers 30, 40S, and 40D, theregions (front channel regions) on the side of the gate electrode 60have the low fluorine concentration and are less susceptible to anincrease in resistance due to fluorine. Thus, it is possible to maintaina high on-state current in the oxide semiconductor layers as before. Inaddition, the resistance of the front channel region of the oxidesemiconductor layer 30 is not increased, and thus it is easy to makecontact with the oxide semiconductor layers 40S and 40D (source regionand drain region).

For these reasons, in the oxide semiconductor layers 30, 40S, and 40D,upper layers on the side of the gate insulating layer 50 (second region32 etc.) preferably include no fluorine (have a zero fluorineconcentration).

Moreover, in the embodiment, the region including fluorine in each ofthe oxide semiconductor layers 30, 40S, and 40 has the fluorineconcentration gradient in the thickness direction.

With this, it is possible to effectively exert the effects of includingfluorine. For example, by setting the fluorine concentration of theregion, in the region including fluorine, on the side of the gateinsulating layer 50 to be low, and the fluorine concentration of theregion in the undercoat layer 20 to be high, it is possible to maintainthe effects of including fluorine and achieve a thin film transistorhaving superior TFT characteristics.

[Display Device]

The following describes an example where the thin-film transistor 1according to the embodiment is applied to a display device, withreference to FIGS. 9 and 10. It is to be noted that an example ofapplication to an organic EL display device will be described in theembodiment.

FIG. 9 is a cutaway perspective view illustrating part of an organic ELdisplay device according to the embodiment. FIG. 10 is an electriccircuit diagram illustrating a pixel circuit of the organic EL displaydevice illustrated by FIG. 9. It is to be noted that the pixel circuitis not limited to the configuration illustrated by FIG. 10.

The above-mentioned thin film transistor 1 can be used as a switchingtransistor SwTr and a driving transistor DrTr of an active matrixsubstrate in the organic EL display device.

As illustrated by FIG. 9, an organic EL display device 100 includes astacked structure of: a TFT substrate (TFT array substrate) 110 in whichthin-film transistors are disposed; and organic EL elements(light-emitting units) 130 each including an anode 131 which is a lowerelectrode (reflecting electrode), and a cathode 133 which is an EL layer(light-emitting layer) 132 and an upper electrode (transparentelectrode).

The TFT substrate 110 in the embodiment includes the above-mentionedthin film transistor 1. Pixels 120 are arranged in a matrix in the TFTsubstrate 110, and a pixel circuit is included in each pixel 120.

Each of the organic EL elements 130 is formed corresponding to adifferent one of the pixels 120, and light emission of the organic ELelement 130 is controlled by the pixel circuit included in thecorresponding pixel 120. Each organic EL element 130 is formed on aninterlayer insulating layer (planarizing layer) formed to cover thinfilm transistors.

Moreover, the organic EL element 130 has a configuration in which the ELlayer 132 is disposed between the anode 131 and the cathode 133.Furthermore, a hole transport layer is formed stacked between the anode131 and the EL layer 132, and an electron transport layer is formedstacked between the EL layer 132 and the cathode 133. It is to be notedthat other function layers may be formed between the anode 131 and thecathode 133. In addition to the EL layer 132, a function layer to beformed between the anode 131 and the cathode 133 is an organic layerincluding an organic material.

Each pixel 120 is driven and controlled by a corresponding one of thepixel circuits. Moreover, in the TFT substrate 110, gate lines (scanninglines) 140 are disposed along the row direction of the pixels 120,source lines (signal lines) 150 are disposed along the column directionof the pixels 120 to cross the gate lines 140, and power supply lines(not illustrated in FIG. 9) are disposed parallel to the source lines150. The pixels 120 are partitioned from one another by, for example,the crossing gate lines 140 and source lines 150.

The gate lines 140 are connected, on a row by row basis, to the gateelectrodes of the switching transistors included in the respective pixelcircuits. The source lines 150 are connected, on a column by columnbasis, to the source electrodes of the switching transistors. The powersupply lines are connected, on a column by column basis, to the drainelectrodes of the driving transistors included in the respective pixelcircuits.

As illustrated by FIG. 10, the pixel circuit includes the switchingtransistor SwTr, the driving transistor DrTr, and a capacitor C whichstores data to be displayed by a corresponding one of the pixels 120. Inthe embodiment, the switching transistor SwTr is a TFT for selecting thepixel 120, and the driving transistor DrTr is a TFT for driving theorganic EL element 130.

The switching transistor SwTr includes: a gate electrode G1 connected tothe gate line 140; a source electrode S1 connected to the source line150; a drain electrode D1 connected to the capacitor C and a gateelectrode G2 of a second thin film transistor DrTr; and an oxidesemiconductor layer (not illustrated). When a predetermined voltage isapplied to the gate line 140 and the source line 150 connected to theswitching transistor SwTr, the voltage applied to the source line 150 isheld as data voltage in the capacitor C.

The driving transistor DrTr includes: the gate electrode G2 connected tothe drain electrode D1 of the switching transistor SwTr and thecapacitor C; a drain electrode D2 connected to the power supply line 160and the capacitor C; a source electrode S2 connected to the anode 131 ofthe organic EL element 130; and an oxide semiconductor layer (notillustrated). The driving transistor DrTr supplies current correspondingto data voltage held in the capacitor C from the power supply line 160to the anode 131 of the organic EL element 130 via the source electrodeS2. With this, in the organic EL element 130, drive current flows fromthe anode 131 to the cathode 133, which causes the EL layer 132 to emitlight.

It is to be noted that the organic EL display device 100 having theabove-described configuration uses an active-matrix system in whichdisplay control is performed for each pixel 120 at a cross-point betweenthe gate line 140 and the source line 150. With this, the switchingtransistor SwTr and the driving transistor DrTr in each pixel 120 causethe corresponding organic EL element 130 to selectively emit light, andthus a desired image is displayed.

As above, the organic EL display device 100 in the embodiment uses, asthe switching transistor SwTr and the driving transistor DrTr, the thinfilm transistor 1 having high reliability and high robustness, and thusit is possible to achieve an organic EL display device having superiorreliability. In particular, the thin film transistor 1 is used as thedriving transistor DrTr driving the organic EL element 130, and thus itis possible to achieve an organic EL display device having superiordisplay performance.

(Variation)

Next, a method for manufacturing a thin film transistor 2 according to avariation of the embodiment will be described with reference to FIGS. 11and 12A to 12C. FIG. 11 is a cross-sectional view illustrating astructure of a thin film transistor according to the variation of theembodiment. FIGS. 12A to 12C are cross-sectional views illustratingmajor processes in the method for manufacturing the thin film transistoraccording to the variation of the embodiment.

As illustrated by FIG. 11, the thin film transistor 2 in the variationis obtained by further disposing, as an inorganic layer, a separationlayer 90 below the substrate 10 in the thin film transistor 1 in theaforementioned embodiment. The separation layer 90 in the variation is alayer (amorphous silicon layer) including amorphous silicon as a maincomponent, and is formed on an under surface of the substrate 10.

The thin film transistor 2 having such a structure is often used when aflexible substrate (resin substrate) is used as the substrate 10, andcan be manufactured as follows, for example.

In this case, first, as illustrated by FIG. 12A, an amorphous siliconlayer is formed as the separation layer 90 on a glass substrate 91.

Next, as illustrated by FIG. 12B, the substrate 10 is attached onto theseparation layer 90 with an adhesive or the like. Then, just like theaforementioned embodiment, all the other processes are performed untilthe source electrode 80S and the drain electrode 80D are formed. As justdescribed, even when the flexible substrate is used as the substrate 10,it is possible to easily form a thin film transistor by forming an oxidesemiconductor layer or the like on the substrate 10 while the substrate10 remains attached to the glass substrate 91.

Next, as illustrated by FIG. 12C, the glass substrate 91 is separated bybeing irradiated with laser light. Specifically, when the separationlayer 90 is irradiated with the laser light, the separation layer 90absorbs the laser light, and hydrogen bubbling occurs in the amorphoussilicon layer. This hydrogen bubbling separates the glass substrate 91from the substrate 10. With this, it is possible to obtain the thin filmtransistor 2.

As just described, hydrogen is generated in the separation layer 90(amorphous silicon layer) in the variation. For this reason, hydrogenfrom the separation layer 90 passes the substrate 10 to enter the oxidesemiconductor layers 30, 40S, and 40D. Consequently, if regionsincluding fluorine are not in the oxide semiconductor layers 30, 40S,and 40D, the oxide semiconductor layers 30, 40S, and 40D would sufferhydrogen damage.

In the variation, fluorine is included in regions that are internalregions in the oxide semiconductor layers 30, 40S, and 40D and are closeto the separation layer 90. With this, the same effects as theaforementioned embodiment can be obtained. Stated differently, thevariation allows the thin film transistor to be less susceptible to thehydrogen damage resulting from the separation layer 90, and thestructure of each of the oxide semiconductor layers 30, 40S, and 40D tobe stabilized. With this, it is possible to achieve a thin filmtransistor having high reliability and high robustness.

It is to be noted that the undercoat layer 20 may not be formed in thevariation. In addition, the thin film transistor 2 in the variation maybe applied to the aforementioned organic EL display device 100.

[Other Variations Etc.]

As shown above, a thin film transistor and a method for manufacturingthe same have been described based on the aforementioned embodiment andvariation, but the present invention is not limited to these.

For example, the amorphous oxide semiconductor of InGaZnO_(x) (IGZO) isused as the oxide semiconductor for use in the oxide semiconductor layerin the aforementioned embodiment and variation, but the presentinvention is not limited to this. An oxide semiconductor including Insuch as a polycrystalline oxide semiconductor like InGaO can be used.

Moreover, the aforementioned embodiment and variation have described theorganic EL display device as the display device including the thin filmtransistor, but the present invention is not limited to this. Forexample, the thin film transistor according to the aforementionedembodiment and variation can be applied to another display device suchas a liquid crystal display device.

In this case, the organic EL display device (organic EL panel) can beused as a flat panel display. For example, the organic EL display devicecan be used as a display panel of any electronic device such as atelevision set, a personal computer, and a cellular phone.

Moreover, the scope of the present invention includes an embodimentobtained by adding various modifications to each embodiment or variationthat may be conceived by those skilled in the art or an embodimentobtained by arbitrarily combining components and functions of theembodiment or variation without departing from the spirit of the presentinvention.

INDUSTRIAL APPLICABILITY

The thin film transistor according to the present invention can bewidely used in a variety of electric equipment including the thin filmtransistor, such as display devices (display panels) like organic ELdisplay devices, television sets, personal computers, and cellularphones.

REFERENCE SIGNS LIST

-   -   1, 2 thin film transistor    -   10 substrate    -   20 undercoat layer    -   30, 40S, 40D oxide semiconductor layer    -   31 first region    -   32 second region    -   50 gate insulating layer    -   60, G1, G2 gate electrode    -   70 interlayer insulating layer    -   80S, S1, S2 source region    -   80D, D1, D2 drain region    -   90 separation layer    -   91 glass substrate    -   100 organic EL display device    -   110 TFT substrate    -   120 pixel    -   130 organic EL element    -   131 anode    -   132 EL layer    -   133 cathode    -   140 gate line    -   150 source line    -   160 power supply line    -   SC1 first oxide semiconductor film    -   SC2 second oxide semiconductor film    -   SwTr switching transistor    -   DrTr driving transistor    -   C capacitor

1. A thin film transistor comprising: a substrate; an inorganic layerdisposed on the substrate; an oxide semiconductor layer formed above theinorganic layer and including at least indium; an insulating layerlocated opposite the inorganic layer with the oxide semiconductor layerbeing between the insulating layer and the inorganic layer; a gateelectrode located opposite the oxide semiconductor layer with theinsulating layer being between the gate electrode and the oxidesemiconductor layer; and a source electrode and a drain electrodeelectrically connected to the oxide semiconductor layer, whereinfluorine is included in a region which is an internal region in theoxide semiconductor layer and is close to the inorganic layer.
 2. Thethin film transistor according to claim 1, wherein the inorganic layeris an undercoat layer including silicon oxide or silicon oxynitride andis formed on a top surface of the substrate.
 3. The thin film transistoraccording to claim 2, wherein the inorganic layer is formed by stackinginsulating films.
 4. The thin film transistor according to claim 1,wherein the inorganic layer is a layer including amorphous silicon as amain component and is formed on an under surface of the substrate. 5.The thin film transistor according to claim 1, wherein a fluorineconcentration of the region close to the inorganic layer in the oxidesemiconductor layer is higher than a fluorine concentration of a regionclose to the insulating layer in the oxide semiconductor layer.
 6. Thethin film transistor according to claim 1, wherein a region includingfluorine which is the region in which fluorine is included in the oxidesemiconductor layer has a fluorine concentration gradient in a thicknessdirection.
 7. The thin film transistor according to claim 1, wherein theregion in which fluorine is included in the oxide semiconductor layerhas a film thickness of at least 15 nm.
 8. The thin film transistoraccording to claim 1, wherein the region in which fluorine is includedin the oxide semiconductor layer has a film thickness of at least 20 nm.9. The thin film transistor according to claim 1, wherein a fluorineconcentration of the oxide semiconductor layer is higher than a hydrogenconcentration of the oxide semiconductor layer.
 10. The thin filmtransistor according to claim 1, wherein metallic elements included inthe oxide semiconductor layer further include at least one or both ofgallium and zinc.
 11. An organic EL display device including the thinfilm transistor according to claim 1, the organic EL display devicecomprising: pixels arranged in a matrix; and organic EL elements eachformed corresponding to a different one of the pixels, wherein the thinfilm transistor is a driving transistor which drives the organic ELelements.